參數(shù)資料
型號(hào): CY7C1513V18-278BZXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture
中文描述: 4M X 18 QDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
文件頁(yè)數(shù): 25/28頁(yè)
文件大?。?/td> 426K
代理商: CY7C1513V18-278BZXC
CY7C1511V18
CY7C1526V18
CY7C1513V18
CY7C1515V18
Document #: 38-05363 Rev. *D
Page 25 of 28
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit
www.cypress.com
for actual products offered
Speed
(MHz)
Ordering Code
Diagram
167
CY7C1511V18-167BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1526V18-167BZC
CY7C1513V18-167BZC
CY7C1515V18-167BZC
CY7C1511V18-167BZXC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1526V18-167BZXC
CY7C1513V18-167BZXC
CY7C1515V18-167BZXC
CY7C1511V18-167BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1526V18-167BZI
CY7C1513V18-167BZI
CY7C1515V18-167BZI
CY7C1511V18-167BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1526V18-167BZXI
CY7C1513V18-167BZXI
CY7C1515V18-167BZXI
200
CY7C1511V18-200BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1526V18-200BZC
CY7C1513V18-200BZC
CY7C1515V18-200BZC
CY7C1511V18-200BZXC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1526V18-200BZXC
CY7C1513V18-200BZXC
CY7C1515V18-200BZXC
CY7C1511V18-200BZI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1526V18-200BZI
CY7C1513V18-200BZI
CY7C1515V18-200BZI
CY7C1511V18-200BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1526V18-200BZXI
CY7C1513V18-200BZXI
CY7C1515V18-200BZXI
250
CY7C1511V18-250BZC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
CY7C1526V18-250BZC
CY7C1513V18-250BZC
CY7C1515V18-250BZC
CY7C1511V18-250BZXC
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
CY7C1526V18-250BZXC
CY7C1513V18-250BZXC
CY7C1515V18-250BZXC
Package
Package Type
Operating
Range
Commercial
Industrial
Commercial
Industrial
Commercial
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CY7C1513V18-278BZXI 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture
CY7C1513V18-300BZC 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture
CY7C1513V18-300BZI 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1513V18-300BZC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 4MX18 0.45NS 165FBGA - Bulk
CY7C1513YC 制造商:Cypress Semiconductor 功能描述:
CY7C1514AV18-167BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514AV18-167BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514AV18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray