參數(shù)資料
型號(hào): CY7C1514AV18-167BZC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類(lèi): DRAM
英文描述: 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述: 2M X 36 QDR SRAM, 0.5 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù): 22/26頁(yè)
文件大小: 1074K
代理商: CY7C1514AV18-167BZC
PRELIMINARY
CY7C1510AV18
CY7C1525AV18
CY7C1512AV18
CY7C1514AV18
Document #: 001-06984 Rev. *B
Page 22 of 26
Hold Times
t
HA
t
HC
t
HCDDR
t
KHAX
t
KHIX
t
KHIX
Address Hold after K Clock Rise
Control Hold after K Clock Rise (RPS, WPS) 0.35
Double Data Rate Control Hold after Clock
(K/K) Rise (BWS
0
, BWS
1
, BWS
3
, BWS
4
)
D
[X:0]
Hold after Clock (K/K) Rise
0.35
0.4
0.4
0.4
0.5
0.5
0.5
ns
ns
ns
0.35
t
HD
Output Times
t
CO
t
KHDX
0.35
0.4
0.5
ns
t
CHQV
C/C Clock Rise (or K/K in Single Clock
Mode) to Data Valid
Data Output Hold after Output C/C Clock
Rise (Active to Active)
C/C Clock Rise to Echo Clock Valid
Echo Clock Hold after C/C Clock Rise
Echo Clock High to Data Valid
Echo Clock High to Data Invalid
Output Clock (CQ/CQ) HIGH
[26]
CQ Clock Rise to CQ Clock Rise
[26]
(rising edge to rising edge)
Clock (C/C) Rise to High-Z (Active to
High-Z)
[27, 28]
Clock (C/ C) Rise to Low-Z
[27, 28]
0.45
0.45
0.50
ns
t
DOH
t
CHQX
–0.45
-0.45
-0.50
ns
t
CCQO
t
CQOH
t
CQD
t
CQDOH
t
CQH
t
CQHCQH
t
CHCQV
t
CHCQX
t
CQHQV
t
CQHQX
t
CQHCQL
t
CQHCQH
0.45
0.30
0.45
0.35
0.50
0.40
ns
ns
ns
ns
ns
ns
–0.45
-0.30
1.55
1.55
-0.45
-0.35
1.95
1.95
-0.50
-0.40
2.45
2.45
t
CHZ
t
CHQZ
0.45
0.45
0.50
ns
t
CLZ
DLL Timing
t
KC Var
t
KC lock
t
KC Reset
Notes:
26.These parameters are extrapolated from the input timing parameters (t
- 250ps, where 250ps is the internal jitter. An input jitter of 200ps (t
KC Var
) ia already
included in the t
). These parameters are only guaranteed by design and are not tested in production.
27.t
, t
, are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured
±
100 mV from steady-state voltage.
28.At any given voltage and temperature t
CHZ
is less than t
CLZ
and t
CHZ
less than t
CO
.
t
CHQX1
-0.45
-0.45
-0.50
ns
t
KC Var
t
KC lock
t
KC Reset
Clock Phase Jitter
DLL Lock Time (K, C)
K Static to DLL Reset
0.20
0.20
0.20
ns
1024
30
1024
30
1024
30
Cycles
ns
Switching Characteristics
Over the Operating Range
[22, 23]
Cypress
Parameter
Consortium
Parameter
Description
250 MHz
Min.
200 MHz
Min.
167 MHz
Min.
Unit
Max
Max
Max
[+] Feedback
相關(guān)PDF資料
PDF描述
CY7C1514AV18-167BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514AV18-167BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514AV18-167BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514AV18-200BZC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514AV18-200BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1514AV18-167BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514AV18-200BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514AV18-200BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514AV18-200BZXC 制造商:Cypress Semiconductor 功能描述:
CY7C1514AV18-200BZXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray