參數(shù)資料
型號(hào): CY7C1514AV18-200BZI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述: 2M X 36 QDR SRAM, 0.45 ns, PBGA165
封裝: 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù): 25/26頁(yè)
文件大?。?/td> 1074K
代理商: CY7C1514AV18-200BZI
PRELIMINARY
CY7C1510AV18
CY7C1525AV18
CY7C1512AV18
CY7C1514AV18
Document #: 001-06984 Rev. *B
Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 25 of 26
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and
Samsung. All product and company names mentioned in this document are the trademarks of their respective holders.
167
CY7C1510AV18-167BZI
CY7C1525AV18-167BZI
CY7C1512AV18-167BZI
CY7C1514AV18-167BZI
CY7C1510AV18-167BZXI
CY7C1525AV18-167BZXI
CY7C1512AV18-167BZXI
CY7C1514AV18-167BZXI
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm)
Industrial
167
51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Lead-Free
Industrial
Ordering Information
(continued)
“Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or
visit
www.cypress.com
for actual products offered”.
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相關(guān)PDF資料
PDF描述
CY7C1514AV18-200BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514AV18-200BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514AV18-250BZC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514AV18-250BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514AV18-250BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1514AV18-200BZXC 制造商:Cypress Semiconductor 功能描述:
CY7C1514AV18-200BZXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514AV18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514AV18-250BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514AV18-250BZXC 制造商:Cypress Semiconductor 功能描述: