參數(shù)資料
型號(hào)： CY7C1514V18-200BZI
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
中文描述： 2M X 36 QDR SRAM, 0.45 ns, PBGA165
封裝： 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
文件頁(yè)數(shù)： 26/27頁(yè)
文件大?。?/td> 458K
代理商： CY7C1514V18-200BZI
CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Document #: 38-05489 Rev. *D
Cypress Semiconductor Corporation, 2006. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Page 26 of 27
Package Diagram
QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, Hitachi, IDT, NEC, and Samsung
technology. All product and company names mentioned in this document are the trademarks of their respective holders.
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165-ball FBGA (15 x 17 x 1.40 mm) (51-85195)
51-85195-*A
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相關(guān)PDF資料
PDF描述
CY7C1514V18-200BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514V18-200BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514V18-250BZI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514V18-250BZXC 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
CY7C1514V18-250BZXI 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1514V18-200BZXC 功能描述:IC SRAM 72MBIT 200MHZ 165TFBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
CY7C1514V18-200BZXI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514V18-200ZXC 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述:
CY7C1514V18-250BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2M x 36 1.8V QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1514V18-250BZCES 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Bulk
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