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參數(shù)資料
| 型號： | CY7C1514V18-250BZXI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| 中文描述： | 2M X 36 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 27/27頁 |
| 文件大小： | 458K |
| 代理商： | CY7C1514V18-250BZXI |
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CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Document #: 38-05489 Rev. *D
Page 27 of 27
Document History Page
Document Title: CY7C1510V18/CY7C1525V18/CY7C1512V18/CY7C1514V18 72-Mbit QDR-II SRAM 2-Word Burst
Architecture
Document Number: 38-05489
Orig. of
Change
**
201260
See ECN
NJY
New Data Sheet
*A
257089
See ECN
NJY
Removed foot note 13 on page 12
Modified JTAG ID register definition table on page 21
Changed Max. value of t
cyc
@ 250 MHz from 5.25 ns to 6.3 ns and
Max. value of t
cyc
@ 200 MHz from 6.3 ns to 7.9 ns.
Changed Max. value of t
KHCH
@ 200 MHz from 2.3 ns to 2.2 ns and
Max. value of t
KHCH
@ 167 MHz from 2.8 ns to 2.7 ns
Included thermal values
Modified capacitance values table: included capacitance values for x8, x18 and x36
options
*B
319496
See ECN
SYT
Removed CY7C1525V18 from the title
Included 300-MHz Speed bin
Added footnote #1 and accordingly edited the V
SS
/144M And V
SS
/288M on the Pin
Definitions table.
Added Industrial Temperature Grade
Replaced TBDs for I
DD
and I
SB1
for 300 MHz, 250 MHz, 200 MHz and 167 MHz speed
grades
Changed the C
IN
from 5 pF to 5.5 pF and C
O
from 7 pF to 8 pF in the Capacitance Table
Removed the capacitance value column for the x9 option from Capacitance Table
Changed typo of bit # 47 to bit # 108 under the EXTEST OUTPUT BUS TRI-STATE on
Page 18
Added lead-free product information
Updated the Ordering Information by Shading and Unshading MPNs as per availability
*C
403231
See ECN
NXR
Converted from Preliminary to Final
Added CY7C1525V18 to the title
Removed 300-MHz Speed bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North
First Street” to “198 Champion Court”
Changed C/C Pin Description in the features section and Pin Description
Added power-up sequence details and waveforms
Added foot notes # 14, 15, 16 on page# 19
Replaced Three-state with Tri-state
Changed the description of I
X
from Input Load Current to Input Leakage Current on
page# 20
Modified the I
DD
and I
SB
current values
Modified test condition in Footnote # 21 on page# 20 from V
DDQ
< V
DD
to V
DDQ
< V
DD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated the Ordering Information
*D
467290
See ECN
NXR
Modified the ZQ Definition from Alternately, this pin can be connected directly to V
DD
to
Alternately, this pin can be connected directly to V
DDQ
Included Maximum Ratings for Supply Voltage on V
DDQ
Relative to GND
Changed the Maximum Ratings for DC Input Voltage from V
DDQ
to V
DD
Changed t
TCYC
from 100 ns to 50 ns, changed t
TF
from 10 MHz to 20 MHz, changed
t
TH
and t
TL
from 40 ns to 20 ns, changed t
TMSS
, t
TDIS
, t
CS
, t
TMSH
, t
TDIH
, t
CH
from
10 ns
to 5 ns and changed t
TDOV
from 20 ns to 10 ns in TAP AC Switching Characteristics table
Modified Power-Up waveform
Added additional notes in the AC parameter section
Changed the t
SC
and t
HC
value from 0.5 ns to 0.35 ns for 250 MHz ,
from 0.6 ns to 0.4 ns for 200 MHz, and from 0.7 ns to 0.5 ns for 167 MHz.
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table.
Updated the Ordering Information Table
REV.
ECN No. Issue Date
Description of Change
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1514V18-278BZC | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1514V18-278BZI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1514V18-278BZXC | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1514V18-278BZXI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1514V18-300BZC | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1514V18-300BZC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Bulk |
| CY7C1514YC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1514ZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1515AV18-167BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 2M x 36 1.8V QDR 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1515AV18-200BZC | 功能描述:靜態(tài)隨機(jī)存取存儲器 2M x 36 1.8V QDR 靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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