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參數(shù)資料
| 型號： | CY7C1515V18-200BZI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| 中文描述： | 2M X 36 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 11/28頁 |
| 文件大?。?/td> | 426K |
| 代理商： | CY7C1515V18-200BZI |
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CY7C1511V18
CY7C1526V18
CY7C1513V18
CY7C1515V18
Document #: 38-05363 Rev. *D
Page 11 of 28
Write Cycle Descriptions
[3, 11]
(CY7C1515V18)
BWS
0
BWS
1
BWS
2
BWS
3
K
K
Comments
L
L
L
L
L–H
–
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are written
into the device.
During the Data portion of a Write sequence, all four bytes (D
[35:0]
) are written
into the device.
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is written
into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the lower byte (D
[8:0]
) is written
into the device. D
[35:9]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is written into
the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[17:9]
) is written into
the device. D
[8:0]
and D
[35:18]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is written
into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[26:18]
) is written
into the device. D
[17:0]
and D
[35:27]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written
into the device. D
[26:0]
will remain unaltered.
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written
into the device. D
[26:0]
will remain unaltered.
No data is written into the device during this portion of a write operation.
No data is written into the device during this portion of a write operation.
L
L
L
L
–
L–H
L
H
H
H
L–H
–
L
H
H
H
–
L–H
H
L
H
H
L–H
–
H
L
H
H
–
L–H
H
H
L
H
L–H
–
H
H
L
H
–
L–H
H
H
H
L
L–H
H
H
H
L
–
L–H
H
H
H
H
H
H
H
H
L–H
–
–
L–H
Write Cycle Descriptions
[3, 11]
(CY7C1526V18)
BWS
0
L
K
K
L–H
–
During the Data portion of a Write sequence, the single byte (D
[8:0]
) is written
into the device.
During the Data portion of a Write sequence, the single byte (D
[8:0]
) is written
into the device.
No data is written into the device during this portion of a write operation.
No data is written into the device during this portion of a write operation.
L
–
L–H
H
H
L–H
–
–
L–H
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1515V18-200BZXC | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| CY7C1515V18-200BZXI | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| CY7C1515V18-250BZI | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| CY7C1515V18-250BZXC | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
| CY7C1515V18-250BZXI | 72-Mbit QDR⑩- II SRAM 4-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1515V18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 2M x 36 1.8V QDR 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1515V18-250BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 72MBIT 2MX36 0.45NS 165FBGA - Bulk |
| CY7C1515V18-250BZXC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1515ZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1518-250BZC | 制造商:Cypress Semiconductor 功能描述: |
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