參數(shù)資料
型號: CY7C166-25VC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 16K x 4 Static RAM
中文描述: 16K X 4 STANDARD SRAM, 25 ns, PDSO24
封裝: 0.300 INCH, MO-088, SOJ-24
文件頁數(shù): 1/9頁
文件大?。?/td> 171K
代理商: CY7C166-25VC
16K x 4 Static RAM
CY7C164
CY7C166
Cypress Semiconductor Corporation
3901 North First Street
San Jose
CA 95134
408-943-2600
Document #: 38-05025 Rev. **
Revised August 24, 2001
66
Features
High speed
—15 ns
Output enable (OE) feature (CY7C166)
CMOS for optimum speed/power
Low active power
— 633 mW
Low standby power
— 110 mW
TTL-compatible inputs and outputs
Automatic power-down when deselected
Functional Description
The CY7C164 and CY7C166 are high-performance CMOS
static RAMs organized as 16,384 by 4 bits. Easy memory ex-
pansion is provided by an active LOW Chip Enable (CE) and
three-state drivers. The CY7C166 has an active LOW Output
Enable (OE) feature. Both devices have an automatic power-
down feature, reducing the power consumption by 65% when
deselected.
Writing to the device is accomplished when the Chip Enable
(CE) and Write Enable (WE) inputs are both LOW (and the
Output Enable (OE) is LOW for the CY7C166). Data on the
four input/output pins (I/O0 through I/O3) is written into the
memory location specified on the address pins (A0 through
A13).
Reading the device is accomplished by taking Chip Enable
(CE) LOW (and OE LOW for CY7C166), while Write Enable
(WE) remains HIGH. Under these conditions the contents of
the memory location specified on the address pins will appear
on the four data I/O pins.
The I/O pins stay in a high-impedance state when Chip Enable
(CE) is HIGH (or Output Enable (OE) is HIGH for CY7C166).
A die coat is used to insure alpha immunity.
]
OE
CE
GND
Logic Block Diagram
Pin Configurations
256 x 64 x 4
ARRAY
1
2
3
4
5
6
7
8
9
10
11
12
13
14
18
17
16
15
19
22
21
20
Top View
DIP
7C164
A1
A2
A3
A4
A5
A6
A7
A8
A
0
A
9
A
11
A
10
A
12
A
13
COLUMN
DECODER
ROW
DE
CODE
R
S
E
N
S
E
AM
PS
INPUT BUFFER
POWER
DOWN
WE
(OE)
(7C166 ONLY)
I/O3
CE
I/O2
I/O1
I/O0
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE
GND
WE
VCC
A4
A3
A2
A1
I/O3
I/O2
I/O1
I/O0
A0
1
2
3
4
5
6
7
8
9
10
11
14
15
16
20
19
18
17
21
24
23
22
Top View
SOJ
7C164
A5
A6
A7
A8
A9
A10
A11
A12
A13
WE
VCC
A4
A3
A2
A1
I/O3
I/O2
I/O1
I/O0
A0
GND
NC
1
2
3
4
5
6
7
8
9
10
11
14
15
16
20
19
18
17
21
24
23
22
Top View
DIP/SOJ
7C166
A5
A6
A7
A8
A9
A10
A11
A12
A13
WE
VCC
A4
A3
A2
A1
I/O3
I/O2
I/O1
I/O0
A0
NC
CE
12
13
12
13
C164–4
C164–3
C164–2
C166–1
Selection Guide
7C164-15
7C166-15
7C164-20
7C166-20
7C164-25
7C166-25
7C164-35
7C166-35
Maximum Access Time (ns)
15
20
25
35
Maximum Operating Current (mA)
115
105
Maximum Standby Current (mA)
20
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