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參數(shù)資料
| 型號： | CYDM064B16 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 1.8V 4K/8K/16K x 16 MoBL㈢ Dual-Port Static RAM |
| 中文描述： | 1.8 4K/8K/16K㈢× 16的MoBL雙端口靜態(tài)存儲器 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大小： | 583K |
| 代理商： | CYDM064B16 |
1.8V 4K/8K/16K x 16
MoBL
Dual-Port Static RAM
CYDM256B16
CYDM128B16
CYDM064B16
Cypress Semiconductor Corporation
Document #: 001-00217 Rev. *E
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 25, 2007
Features
True dual-ported memory cells that allow simultaneous
access of the same memory location
4/8/16K × 16 organization
High-speed access: 40 ns
Ultra Low operating power
— Active: I
CC
= 15 mA (typical) at 55 ns
— Active: I
CC
= 25 mA (typical) at 40 ns
— Standby: I
SB3
= 2
μ
A (typical)
Small footprint: Available in a 6x6 mm 100-pin
Lead(Pb)-free vfBGA
Port-independent 1.8V, 2.5V, and 3.0V I/Os
Full asynchronous operation
Automatic power-down
Pin select for Master or Slave
Expandable data bus to 32 bits with Master/Slave chip
select when using more than one device
On-chip arbitration logic
Semaphores included to permit software handshaking
between ports
Input Read Registers and Output Drive Registers
INT flag for port-to-port communication
Separate upper-byte and lower-byte control
Industrial temperature ranges
Selection Guide for V
CC
= 1.8V
CYDM256B16, CYDM128B16,
CYDM064B16
-40
1.8V-1.8V
40
25
2
2
CYDM256B16, CYDM128B16,
CYDM064B16
-55
1.8V-1.8V
55
15
2
2
Unit
ns
mA
μ
A
μ
A
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for I
SB1
Typical Standby Current for I
SB3
Selection Guide for V
CC
= 2.5V
CYDM256B16, CYDM128B16,
CYDM064B16
-40
2.5V-2.5V
40
39
6
4
CYDM256B16, CYDM128B16,
CYDM064B16
-55
2.5V-2.5V
55
28
6
4
Unit
ns
mA
μ
A
μ
A
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for I
SB1
Typical Standby Current for I
SB3
Selection Guide for V
CC
= 3.0V
CYDM256B16, CYDM128B16,
CYDM064B16
-40
3.0V-3.0V
40
49
7
6
CYDM256B16, CYDM128B16,
CYDM064B16
-55
3.0V-3.0V
55
42
7
6
Unit
ns
mA
μ
A
μ
A
Port I/O Voltages (P1-P2)
Maximum Access Time
Typical Operating Current
Typical Standby Current for I
SB1
Typical Standby Current for I
SB3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CYDM064B16_08 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL? Dual-Port Static RAM |
| CYDM064B16_09 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL Dual-Port Static RAM |
| CYDM064B16_11 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4K/8K/16K x 16 MoBL? Dual-Port Static RAM |
| CYDM064B16-40BVXI | 功能描述:靜態(tài)隨機(jī)存取存儲器 64K 4Kx16 MoBL Dual Port IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYDM064B16-40BVXIT | 功能描述:IC SRAM 64KBIT 40NS 100VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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