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參數(shù)資料
| 型號： | CYDM064B16 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 1.8V 4K/8K/16K x 16 MoBL㈢ Dual-Port Static RAM |
| 中文描述： | 1.8 4K/8K/16K㈢× 16的MoBL雙端口靜態(tài)存儲器 |
| 文件頁數(shù)： | 14/25頁 |
| 文件大小： | 583K |
| 代理商： | CYDM064B16 |
CYDM256B16
CYDM128B16
CYDM064B16
Document #: 001-00217 Rev. *E
Page 14 of 25
Switching Characteristics for V
CC
= 2.5V
Over the Operating Range
Parameter
Description
CYDM256B16,
CYDM128B16,
CYDM064B16
CYDM256B16,
CYDM128B16,
CYDM064B16
Unit
-40
-55
Min.
Max.
Min.
Max.
Read Cycle
t
RC
t
AA
t
OHA
t
ACE[24]
t
DOE
t
LZOE[25, 26, 27]
t
HZOE[25, 26, 27]
t
LZCE[25, 26, 27]
t
HZCE[25, 26, 27]
t
PU[27]
t
PD[27]
t
ABE[24]
Write Cycle
Read Cycle Time
40
55
ns
Address to Data Valid
40
55
ns
Output Hold From Address Change
5
5
ns
CE LOW to Data Valid
40
55
ns
OE LOW to Data Valid
25
30
ns
OE Low to Low Z
2
2
ns
OE HIGH to High Z
15
25
ns
CE LOW to Low Z
2
2
ns
CE HIGH to High Z
15
25
ns
CE LOW to Power-Up
0
0
ns
CE HIGH to Power-Down
40
55
ns
Byte Enable Access Time
40
55
ns
t
WC
t
SCE[24]
t
AW
t
HA
t
SA[24]
t
PWE
t
SD
t
HD
t
HZWE[26, 27]
t
LZWE[26, 27]
t
WDD[28]
t
DDD[28]
Busy Timing
[29]
Write Cycle Time
40
55
ns
CE LOW to Write End
30
45
ns
Address Valid to Write End
30
45
ns
Address Hold From Write End
0
0
ns
Address Set-up to Write Start
0
0
ns
Write Pulse Width
25
40
ns
Data Set-up to Write End
20
30
ns
Data Hold From Write End
0
0
ns
R/W LOW to High Z
15
25
ns
R/W HIGH to Low Z
0
0
ns
Write Pulse to Data Delay
55
80
ns
Write Data Valid to Read Data Valid
55
80
ns
t
BLA
t
BHA
t
BLC
t
BHC
t
PS[30]
t
WB
t
WH
t
BDD[31]
Interrupt Timing
[29]
BUSY LOW from Address Match
30
45
ns
BUSY HIGH from Address Mismatch
30
45
ns
BUSY LOW from CE LOW
30
45
ns
BUSY HIGH from CE HIGH
30
45
ns
Port Set-up for Priority
5
5
ns
R/W HIGH after BUSY (Slave)
0
0
ns
R/W HIGH after BUSY HIGH (Slave)
20
35
ns
BUSY HIGH to Data Valid
30
40
ns
t
INS
t
INR
INT Set Time
35
45
ns
INT Reset Time
35
45
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CYDM064B16_08 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL? Dual-Port Static RAM |
| CYDM064B16_09 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4K/8K/16K x 16 and 8K/16K x 8 MoBL Dual-Port Static RAM |
| CYDM064B16_11 | 制造商:CYPRESS 制造商全稱:Cypress Semiconductor 功能描述:1.8V 4K/8K/16K x 16 MoBL? Dual-Port Static RAM |
| CYDM064B16-40BVXI | 功能描述:靜態(tài)隨機存取存儲器 64K 4Kx16 MoBL Dual Port IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYDM064B16-40BVXIT | 功能描述:IC SRAM 64KBIT 40NS 100VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
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