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參數(shù)資料
| 型號： | CYDM128B16 |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 1.8V 4K/8K/16K x 16 MoBL㈢ Dual-Port Static RAM |
| 中文描述： | 1.8 4K/8K/16K㈢× 16的MoBL雙端口靜態(tài)存儲器 |
| 文件頁數(shù)： | 18/25頁 |
| 文件大?。?/td> | 583K |
| 代理商： | CYDM128B16 |
CYDM256B16
CYDM128B16
CYDM064B16
Document #: 001-00217 Rev. *E
Page 18 of 25
Write Cycle No.1: R/W Controlled Timing
[37, 38, 39, 40, 41, 42]
Write Cycle No. 2: CE Controlled Timing
[37, 38, 39, 44]
Notes:
39.t
is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle.
40.If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
or (t
+ t
) to allow the I/O drivers to turn off and data to
be placed on the bus for the required t
SD
. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short
as the specified t
.
41.To access RAM, CE = V
, SEM = V
.
42.To access upper byte, CE = V
IL
, UB = V
IL
, SEM = V
IH
.
To access lower byte, CE = V
, LB = V
, SEM = V
.
43.Transition is measured
±
0 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested.
44.During this period, the I/O pins are in the output state, and input signals must not be applied.
Switching Waveforms
(continued)
t
AW
t
WC
t
PWE
t
HD
t
SD
t
HA
CE
R/W
OE
DATA OUT
DATA IN
ADDRESS
t
HZOE
t
SA
t
HZWE
t
LZWE
[43]
[43]
[40]
[41, 42]
NOTE 44
NOTE 44
t
AW
t
WC
t
SCE
t
HD
t
SD
t
HA
CE
R/W
DATA IN
ADDRESS
t
SA
[41, 42]
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| CYDM128B16-40BVXI | 功能描述:靜態(tài)隨機存取存儲器 128K 8Kx16 MoBL Dual Port IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYDM128B16-40BVXIT | 功能描述:IC SRAM 128KBIT 40NS 100VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ |
| CYDM128B16-55BVXC | 制造商:Cypress Semiconductor 功能描述: |
| CYDM128B16-55BVXI | 功能描述:靜態(tài)隨機存取存儲器 128K 8Kx16 MoBL Dual Port IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CYDM128B16-55BVXIT | 功能描述:靜態(tài)隨機存取存儲器 128K (8Kx16) MoBL Dual-Port RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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