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參數(shù)資料
| 型號(hào)： | CYK256K16MCCBU-55BVI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4-Mbit (256K x 16) Pseudo Static RAM |
| 中文描述： | 256K X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 |
| 封裝： | 6 X 8 MM, 1 MM HEIGHT, FBGA-48 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 305K |
| 代理商： | CYK256K16MCCBU-55BVI |
CYK256K16MCCB
MoBL3
Document #: 38-05585 Rev. *F
Page 3 of 10
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................–65°C to + 150°C
Ambient Temperature with
Power Applied ...........................................–55°C to + 125°C
Supply Voltage to Ground Potential ................ –0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State
[6, 7, 8]
....................................... –0.4V to 3.7V
DC Input Voltage
[6, 7, 8]
....................................–0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Industrial
Ambient Temperature
–25°C to +85°C
V
CC
2.70V to 3.30V
Electrical Characteristics
Over the Operating Range
Parameter
V
CC
V
OH
V
OL
Description
Supply Voltage
Output HIGH Voltage I
OH
= –0.1 mA
Output LOW
Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
Test Conditions
CYK256K16MCCB -55, 60, 70
Min.
Typ.
[5]
2.7
3.0
V
CC
– 0.4
Unit
V
V
V
Max.
3.3
V
CC
= 2.70V
V
CC
= 2.70V
I
OL
= 0.1 mA
0.4
V
IH
V
IL
I
IX
0.8 * Vcc
–0.4
–1
V
CC
+ 0.4V
0.6
+1
V
V
μ
A
GND < V
IN
< V
CC
I
OZ
GND < V
OUT
< V
CC
, Output Disabled
–1
+1
μ
A
I
CC
f = f
MAX
= 1/t
RC
V
CC
=
V
CCmax
I
OUT
= 0 mA
CMOS levels
14 for –55
14 for –60
8 for –70
1 for all speeds 5 for all speeds
150
22 for –55
22 for –60
15 for –70
mA
f = 1 MHz
CE > V
CC
0.2V
V
IN
> V
CC
–0.2V, V
IN
<
0.2V) f = f
MAX
(Address
and Data Only), f = 0
(OE, WE, BHE and
BLE), V
CC
= 3.30V
CE > V
CC
– 0.2V
V
IN
> V
CC
– 0.2V or
V
IN
< 0.2V,
f = 0, V
CC
= 3.30V
mA
μ
A
I
SB1
Automatic CE
Power-Down
Current—CMOS
Inputs
V
CC
= 3.3V
250
I
SB2
Automatic CE
Power-Down
Current—CMOS
Inputs
V
CC
= 3.3V
17
40
μ
A
Thermal Resistance
[9]
Parameter
Θ
JA
Θ
JC
Description
Test Conditions
BGA
55
17
Unit
°
C/W
°
C/W
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Test conditions follow standard test methods
and procedures for measuring thermal
impedence, per EIA/JESD51.
Capacitance
[9]
Parameter
Description
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
Notes:
6. V
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
7. V
= V
+ 0.5V for pulse durations less than 20 ns.
8. Overshoot and undershoot specifications are characterized and are not 100% tested.
9. Tested initially and after any design or process changes that may affect these parameters.
[+] Feedback
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CYK256K16MCCBU-60BVI | 制造商:CYPRESS 制造商全稱(chēng):Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Pseudo Static RAM |
| CYK256K16MCCBU-70BVI | 制造商:CYPRESS 制造商全稱(chēng):Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Pseudo Static RAM |
| CYK256K16SCBU-55BVXI | 制造商:CYPRESS 制造商全稱(chēng):Cypress Semiconductor 功能描述:4-Mbit (256K x 16) Pseudo Static RAM |
| CYK256K16SCBU-70BVXI | 功能描述:IC PSRAM 4MBIT 70NS 48VFBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:移動(dòng) SDRAM 存儲(chǔ)容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱(chēng):557-1327-2 |
| CYK256K16SCBU-70BVXIT | 制造商:Cypress Semiconductor 功能描述:SRAM ASYNC SGL 3V 4MBIT 256KX16 70NS 48VFBGA - Tape and Reel |
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