| 型號 | 廠商 | 描述 |
| k4m56323le-el1h 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-el1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-el80 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-en1h 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-en1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-en80 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-er1h 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-er1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-er80 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-es1h 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-es1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-es80 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-ms1l 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4m56323le-ms80 2 3 4 5 6 7 8 9 10 11 12 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
| k4n51163qc-zc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit gDDR2 SDRAM |
| k4n51163qc-zc25 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | ; Filter Type:RFI; Current Rating:180A; Voltage Rating:480V; Series:FN258 RoHS Compliant: Yes |
| k4n51163qc-zc2a 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit gDDR2 SDRAM |
| k4n51163qc-zc33 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit gDDR2 SDRAM |
| k4n51163qc-zc36 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 512Mbit gDDR2 SDRAM |
| k4r271669b-n(m)cg6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669b-n(m)ck7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669b-nb(m)cck8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b-n(m)cg6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b-n(m)ck7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r441869b-n(m)ck8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| k4r271669e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit RDRAM(E-die) |
| k4r571669d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256/288Mbit RDRAM(D-die) |
| k4r881869d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 256/288Mbit RDRAM(D-die) |
| k4r761869a-gcn1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| k4r761869a-gct9 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| k4r761869a-f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| k4r761869a-fbccn1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| k4r761869a-fcm8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| k4r761869a-fct9 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| k4r761869a-gcm8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| k4r881869 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r881869m 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r881869m-nbccg6 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r881869m-nck7 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4r881869m-nck8 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| k4s280432a 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| k4s280432c 2 3 4 5 6 7 8 9 10 11 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| k4s280432f-uc 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| k4s280432f-tcl75 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb F-die SDRAM Specification |
| k4s280432f-ul75 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| k4s280432f-uc75 2 3 4 5 6 7 8 9 10 11 12 13 14 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) |
| k4s280432m 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL |
| k4s280832a 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL |