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參數(shù)資料
| 型號： | IBM13N16734HCC-10T |
| 英文描述： | x72 SDRAM Module |
| 中文描述： | x72內(nèi)存模塊 |
| 文件頁數(shù)： | 7/20頁 |
| 文件大?。?/td> | 378K |
| 代理商： | IBM13N16734HCC-10T |
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 7 of 20
IBM13N16644HCC
IBM13N16734HCC
16M x 64/72 Two-Bank Unbuffered SDRAM Module
19L7296.E93875B
12/99
Serial Presence Detect (Part 1 of 3)
Byte #
Description
SPD Entry Value
Serial PD Data Entry
(Hexadecimal)
80
08
04
0C
09
02
4000
4800
01
A0
60
70
00
02
80
08
00
08
01
8F
04
06
01
01
00
Notes
0
1
2
3
4
5
Number of Serial PD Bytes Written during Production
Total Number of Bytes in Serial PD device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of DIMM Banks
128
256
SDRAM
12
9
2
x64
x72
LVTTL
10.0ns
6.0ns
7.0ns
Non-Parity
ECC
SR/1x(15.625us)
x8
N/A
x8
1 Clock
1,2,4,8, Full Page
4
2, 3
0
0
Unbuffered
Wr-1/Rd Burst, Precharge All,
Auto-Precharge, V
DD
+/- 10%
10.0ns
15.0ns
15.0ns
6.0ns
9.0ns
8.0ns
N/A
N/A
20ns
30ns
20ns
20ns
20ns
30ns
6 - 7
Data Width of Assembly
16M x 64
16M x 72
8
9
Voltage Interface Level of this Assembly
SDRAM Device Cycle Time at CL=3
SDRAM Device Access Time from Clock
at CL=3
10
-260, -360
-10
16M x 64
16M x 72
1
11
DIMM Configuration Type
12
13
Refresh Rate/Type
Primary SDRAM Device Width
14
Error Checking SDRAM Device Width
16M x 64
16M x 72
15
16
17
18
19
20
21
SDRAM Device Attr: Min Clk Delay, Random Col Access
SDRAM Device Attributes: Burst Lengths Supported
SDRAM Device Attributes: Number of Device Banks
SDRAM Device Attributes: CAS Latencies Supported
SDRAM Device Attributes: CS Latency
SDRAM Device Attributes: WE Latency
SDRAM Module Attributes
22
SDRAM Device Attributes: General
0E
23
Minimum Clock Cycle at CL=2
-260
-360
-10
-260
-360
-10
A0
F0
F0
60
90
80
00
00
14
1E
14
14
14
1E
24
Maximum Data Access Time (t
AC
) from
Clock at CL=2
1
25
26
Minimum Clock Cycle Time at CL=1
Maximum Data Access Time (t
AC
) from Clock at CL=1
27
Minimum Row Precharge Time (t
RP
)
-260, -360
-10
-260, -360
-10
-260, -360
-10
28
Minimum Row Active to Row Active delay
(t
RRD
)
29
Minimum RAS to CAS delay (t
RCD
)
1. See the AC output load circuit in the AC Characteristics section below
2. cc = Checksum Data byte, 00-FF (Hex)
3. “R” = Alphanumeric revision code, A-Z, 0-9
4. rr = ASCII coded revision code byte “R”
5. yy = Binary coded decimal year code, 00-99 (Decimal)
00-63 (Hex)
6. ww = Binary coded decimal week code, 01-52 (Decimal)
01-34 (Hex)
7. ss = Serial number data byte, 00-FF (Hex)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IBM13N16734HCC-260T | x72 SDRAM Module |
| IBM13N16644HCC | 16M x 64 Two-Bank Unbuffered SDRAM Module(16M x 64 2組不帶緩沖同步動態(tài)RAM模塊) |
| IBM13N16734HCC | 16M x 72 Two-Bank Unbuffered SDRAM Module(16M x 72 2組不帶緩沖同步動態(tài)RAM模塊) |
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