參數(shù)資料
型號: DFM300LXS18-A000
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 參考電壓二極管
英文描述: Fast Recovery Diode Module Preliminary Information
中文描述: 300 A, 1800 V, SILICON, RECTIFIER DIODE
封裝: L, 2 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 92K
代理商: DFM300LXS18-A000
DFM300LXS18-A000
2/7
www.dynexsemi.com
Units
V
A
A
kA
2
s
W
kV
pC
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
Symbol
V
RRM
I
F
I
FM
I
2
t
Pmax
V
isol
Q
pd
Test Conditions
T
vj
= 125C
DC, T
case
= 65C, T
vj
= 125C
T
case
= 110C, t
p
= 1ms
V
R
= 0, t
p
= 10ms, T
vj
= 125C
T
case
= 25C, T
vj
= 125C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
IEC1287. V
1
= 1200V, V
2
= 900V, 50Hz RMS
Max.
1200
300
600
50
1040
4
10
Parameter
Repetitive peak reverse voltage
Forward current (per arm)
Max. forward current
I
2
t value fuse current rating
Maximum power dissipation
Isolation voltage
Partial discharge
Test Conditions
Continuous dissipation -
junction to case
Mounting torque 5Nm
(with mounting grease)
-
-
Mounting - M6
Electrical connections - M6
Parameter
Thermal resistance - diode (per arm)
Thermal resistance - case to heatsink
(per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C
C
Nm
Nm
Max.
96
15
125
125
5
5
Typ.
-
-
-
-
-
-
Min.
-
-
-
–40
-
-
Internal insulation:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index): 175
Al
2
O
3
Cu
22mm
12mm
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