參數(shù)資料
型號(hào): DG646BH
英文描述: GTO Thyristors - Disc / Puk Devices
中文描述: GTO晶閘管-光盤/北辰設(shè)備
文件頁(yè)數(shù): 15/19頁(yè)
文件大小: 219K
代理商: DG646BH
DG646BH25
15/19
20
30
40
50
60
70
Rate of rise of reverse gate current dI
GQ
/dt - (A/
μ
s)
650
600
550
500
450
P
G
Conditions:
C
= 2.0
μ
F,
I
T
= 2000A
T
j
= 25
C
T
j
= 125
C
700
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
8000
6000
4000
2000
0
T
G
Conditions:
C
S
= 2.0μF,
dI
GQ
/dt = 40A/μs
T
j
= 25
C
T
j
= 125
C
Fig.25 Peak reverse gate current vs rate of rise of reversegate current
Fig.26 Turn-off gate charge vs on-state current
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