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參數(shù)資料
| 型號： | DG648BH45 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 晶閘管 |
| 英文描述： | Gate Turn-off Thyristor |
| 中文描述： | 1169.65 A, 4500 V, GATE TURN-OFF SCR |
| 封裝： | H, 4 PIN |
| 文件頁數(shù)： | 8/19頁 |
| 文件大?。?/td> | 221K |
| 代理商： | DG648BH45 |
DG648BH45
8/19
0
20
40
60
80
Peak forward gate current I
FGM
- (A)
4000
3000
2000
1000
0
T
O
Conditions:
T
j
= 125
C, I
T
= 2000A,
C
= 2.0μF, R
= 10 Ohms
dI/dt = 300A/μs,
dI
FG
/dt = 30A/μs
V
D
= 3000V
V
D
= 2000V
V
D
= 1000V
5000
0
500
1000
1500
2000
2500
3000
On-state current I
T
- (A)
4000
3000
2000
1000
0
T
O
Conditions:
T
j
= 125
C, I
FGM
= 30A,
C
S
= 2.0
μ
F,
R
S
= 10
,
dI
T
/dt = 300A/
μ
s,
dI
FG
/dt = 30A/
μ
s,
V
D
= 3000V
V
D
= 2000V
V
D
= 1000V
0
100
200
300
Rate of rise of on-state current dI
T
/dt - (A/
μ
s)
4000
3000
2000
1000
0
T
O
Conditions:
I
T
= 2000A,
T
j
= 125
C,
C
S
= 2.0
μ
F
R
S
= 10 Ohms
I
FGM
= 30A,
dI
FG
/dt = 30A/
μ
s
V
D
= 2000V
V
D
= 3000V
V
D
= 1000V
Fig.10 Turn-on energy vs on-state current
Fig.11 Turn-on energy vs peak forward gate current
Fig.12 Turn-on energy vs rate of rise of on-state current
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