參數(shù)資料
型號: DG648BH
英文描述: GTO Thyristor - Asymmetric - Disc / Puk Devices
中文描述: GTO的晶閘管-不對稱-光盤/北辰設(shè)備
文件頁數(shù): 17/19頁
文件大小: 221K
代理商: DG648BH
DG648BH45
17/19
A
VD
0.9VD
0.1VD
td
tr
tgt
IT
VDP
0.9IT
ITAIL
dVD/dt
VD
VDM
G
tgs
tgf
tw1
VFG
IFG
0.1IFG
dIFG/dt
0.1IGQ
QGQ
0.5IGQM
IGQM
VRG
V(RG)BR
IG(ON)
tgq
Recommended gate conditions:
I
TCM
= 2000A
I
FG
= 30A
I
G(ON)
= 7A d.c.
t
w1(min)
= 20
μ
s
I
GQM
= 690A
di
GQ
/dt = 40A/
μ
s
Q
GQ
= 6000
μ
C
V
RG(min)
= 2V
V
RG(max)
= 16V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.29 General switching waveforms
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