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參數(shù)資料
| 型號： | DGT305SE |
| 英文描述： | GTO Thyristors - Asymmetric - Disc / Puk Devices |
| 中文描述： | GTO晶閘管-不對稱-光盤/北辰設(shè)備 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 1188K |
| 代理商： | DGT305SE |
DGT305RE
3/13
www.dynexsemi.com
CHARACTERISTICS
THERMAL RATINGS
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.20
-
0.018
o
C/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.075
o
C/W
Anode side cooled
o
C/W
0.12
Virtual junction temperature
T
OP
/T
stg
Operating junction/storage temperature range
-
Clamping force
-
125
6.0
5.0
–40
kN
o
C/W
Clamping force 5.5kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
o
C
o
C
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
-
900
V
RGM
= 16V, No gate/cathode resistor
μ
C
I
T
=600A, V
D
= 1200V,
Snubber Cap Cs = 1.5
μ
F,
di
GQ
/dt = 15A/
μ
s
R
L
= (Residual inductance 2.75
μ
H)
T
j
= 125
o
C unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
Min.
Max.
Units
-
2.5
V
At = V
DRM
, V
RG
= 2V
-
50
mA
At V
RRM
-
50
mA
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
0.75
V
V
D
= 24V, I
T
= 100A, T
j
= 25
o
C
-
1.2
A
mA
mJ
160
-
V
D
= 1200V, I
T
= 600A,
I
FG
= 20A, rise time < 1.0
μ
s
R
L
= (Residual inductance 2.75
μ
H)
μ
s
1.1
-
-
2.5
μ
s
-
550
mJ
-
30
μ
s
μ
s
12
-
μ
s
13.5
-
-
1800
μ
C
At 600A peak, I
G(ON)
= 2A d.c.
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