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MRF284R1 MRF284LSR1
5–38
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 150
μ
Adc)
V
GS(th)
2.0
3.0
4.0
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 200 mAdc)
V
GS(q)
3.0
4.0
5.0
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 1.0 Adc)
V
DS(on)
—
0.3
0.6
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 1.0 Adc)
g
fs
—
1.5
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
—
43
—
pF
Output Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
—
23
—
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
—
1.4
—
pF
FUNCTIONAL TESTS
(in Motorola Test Fixture, 50 ohm system)
Common–Source Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
G
ps
9
10.5
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
30
35
—
%
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
—
–32
–29
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W, I
DQ
= 200 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
—
–15
–9
dB
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
G
ps
9
10.4
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
η
—
35
—
%
Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IMD
—
–34
—
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 30 W PEP, I
DQ
= 200 mA,
f1 = 1930.0 MHz, f2 = 1930.1 MHz)
IRL
—
–15
–9
dB
Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 200 mA,
f1 = 2000.0 MHz)
G
ps
8.5
9.5
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 200 mA,
f1 = 2000.0 MHz)
η
35
45
—
%
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 30 W CW, I
DQ
= 200 mA,
f1 = 2000.0 MHz, VSWR = 10:1,
at All Phase Angles)
Ψ
No Degradation In Output Power
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.