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MRF9060MR1 MRF9060MBR1
5–202
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF Sub–Micron MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — –31.5 dBc
Integrated ESD Protection
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
24 mm, 13 inch Reel.
TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
44 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
–0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
223
1.79
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
175
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.56
°
C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
SEMICONDUCTOR TECHNICAL DATA
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945 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1337–02, STYLE 1
TO–272 DUAL LEAD
PLASTIC
MRF9060MBR1
CASE 1265–08, STYLE 1
TO–270 DUAL LEAD
PLASTIC
MRF9060MR1
REV 5
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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.