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MRF18085B MRF18085BR3 MRF18085BLSR3
5–290
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier
amplifier applications.
GSM and GSM EDGE Performance, Full Frequency Band (1930 – 1990
MHz)
Power Gain – 12.5 dB (Typ) @ 85 Watts CW
Efficiency – 50% (Typ) @ 85 Watts CW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency, and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,
@ f = 1930 MHz
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
μ″
Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
Vdc
Gate–Source Voltage
V
GS
–0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
273
1.56
Watts
W/
°
C
Storage Temperature Range
T
stg
–65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.79
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
SEMICONDUCTOR TECHNICAL DATA
"!&
"!&
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GSM/GSM EDGE
1.9 – 1.99 GHz, 85 W, 26 V
LATERAL N–CHANNEL
RF POWER MOSFETs
CASE 465–06, STYLE 1
NI–780
MRF18085B, MRF18085BR3
CASE 465A–06, STYLE 1
NI–780S
MRF18085BLSR3
REV 2
F
Freescale Semiconductor, Inc.
Go to: www.freescale.com
n
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