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MRF21060 MRF21060R3 MRF21060SR3
5–376
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
6
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
V
GS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 500 mAdc)
V
GS(Q)
2.5
3.9
4.5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.27
—
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
4.7
—
S
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
2.7
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
G
ps
11
12.5
—
dB
Two–Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
η
31
34
—
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
IMD
—
–30
–28
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 60 W PEP, I
DQ
= 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
IRL
—
–12
—
dB
P
out
, 1 dB Compression Point
(V
DD
= 28 Vdc, P
out
= 60 W CW, f = 2170 MHz)
P1dB
—
60
—
W
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
F
Freescale Semiconductor, Inc.
Go to: www.freescale.com
n
.