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MRF21120
5–402
MOTOROLA WIRELESS
RF PRODUCT DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Drain–Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20
μ
Adc)
V
(BR)DSS
65
—
—
Vdc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc )
I
GSS
—
—
1
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
ON CHARACTERISTICS
(1)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
—
4.8
—
S
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
μ
A)
V
GS(th)
2.5
3
3.8
Vdc
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 500 mA)
V
GS(Q)
3
3.9
5
Vdc
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 2 A)
V
DS(on)
—
0.38
0.5
Vdc
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
—
2.8
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2)
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
G
ps
10.5
11.4
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
η
30
34.5
—
%
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
IMD
—
–31
–28
dB
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2170.0 MHz, f2 = 2170.1 MHz)
500 mA,
IRL
—
–12
–9
dB
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
500 mA,
G
ps
—
11.5
—
dB
Common–Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
G
ps
—
11.5
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
η
—
34.5
—
%
Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
IMD
—
–31
—
dB
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 120 W PEP, I
DQ
= 2
f1 = 2110.0 MHz, f2 = 2110.1 MHz)
500 mA,
IRL
—
–12
—
dB
Power Output, 1 dB Compression Point
(V
DD
= 28 Vdc, CW, I
DQ
= 2
500 mA, f1 = 2170.0 MHz)
P1dB
—
120
—
Watts
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.