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參數(shù)資料
| 型號： | DNB61 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Rectifier Diode |
| 中文描述： | 整流二極管 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 90K |
| 代理商： | DNB61 |
4/7
www.dynexsemi.com
DNB61
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
μ
C
-
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RR
Peak recovery current
140
-
A
3000
At V
RRM
, T
case
= 175
o
C
-
100
mA
-
1.05
V
At 1500A peak, T
case
= 25
o
C
Conditions
Typ.
Max.
Units
At T
vj
= 175C
-
V
TO
Threshold voltage
r
T
Slope resistance
0.15
m
At T
vj
= 175C
-
0.79
V
t
rr
Reverse recovery time
30
-
μ
s
I
F
= 1000A, dI
RR
/dt = 5A/
μ
s
T
case
= 125C, V
R
= 100V
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
√
I
F
Where
A = 0.827166
B = –0.03596
C = 0.000111
D = 0.007187
these values are valid for T
j
= 125C for I
F
500A to 10000A
0
1.0
2.0
3.0
Instantaneous forward voltage, V
F
- (V)
0
2000
4000
6000
8000
10000
I
F
Measured under
pulse conditions
T
j
= 25
C
T
j
= 175
C
0
2000
4000
6000
Mean forward current, I
F(AV)
- (A)
0
2000
4000
6000
8000
10000
M
dc
Half wave
3 phase
6 phase
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