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參數(shù)資料
| 型號： | DNB6311 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier Diode |
| 中文描述： | 5794 A, 1100 V, SILICON, RECTIFIER DIODE, DO-200AD |
| 封裝： | DO-200AD, 2 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 131K |
| 代理商： | DNB6311 |
4/7
www.dynexsemi.com
DNB63
CHARACTERISTICS
Forward voltage
Peak reverse current
Parameter
μ
C
4000
Q
S
Total stored charge
Symbol
V
FM
I
RRM
I
RM
Peak recovery current
-
600
A
-
At V
RRM
, T
case
= 190
o
C
-
60
mA
-
1.05
V
At 3000A peak, T
case
= 25
o
C
Conditions
Min.
Max.
Units
At T
vj
= 190C
-
V
TO
Threshold voltage
r
T
Slope resistance
0.046
m
At T
vj
= 190C
-
0.75
V
t
rr
Reverse recovery time
-
20
μ
s
I
F
= 1000A, dI
RR
/dt = 50A/
μ
s
T
case
= 175C, V
R
= 100V
CURVES
Fig.2 Maximum (limit) forward characteristics
Fig.3 Dissipation curves
V
FM
Equation:-
V
FM
= A + Bln (I
F
) + C.I
F
+D.
√
I
F
Where
A = 0.517184
B = 0.035583
C = 4.94 x 10
–5
D = –0.0011
these values are valid for T
j
= 125C for I
F
500A to 10000A
0.5
1.0
1.5
2.0
Instantaneous forward voltage, V
F
- (V)
0
2000
4000
6000
8000
10000
I
F
Measured under pulse
conditions
T
j
= 190
C
0
2000
Mean forward current, I
F(AV)
- (A)
4000
6000
8000
0
2000
4000
6000
8000
M
dc
Half wave
6 phase
3 phase
10000
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| DNB6312 | 制造商:Dynex Semiconductor 功能描述:RECTIFIER MODULE - STANDARD RECOVERY 制造商:Dynex Semiconductor 功能描述:STANDARD RECOVERY DIODE AND RECTIFIER |
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