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參數(shù)資料
| 型號(hào)： | DS1104SG29 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier Diode |
| 中文描述： | 1849 A, 2900 V, SILICON, RECTIFIER DIODE |
| 封裝： | G, 2 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 108K |
| 代理商： | DS1104SG29 |
5/7
www.dynexsemi.com
DS1104SG
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
Fig.6 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
175C)
0.1
1.0
10
100
Rate of decay of on-state current dI
F
/dt - (A/μs)
10000
1000
100
S
S
Conditions:
T
j
= 175
C
V
R
= 100V
I
F
= 1000A
I
R
M
I
F
dI
F
/dt
Q
S
0.1
1.0
10
100
Rate of decay of forward current, dI
F
/dt - (A/μs)
1000
100
10
R
r
Conditions:
T
j
= 175
C
V
R
= 100V
I
F
= 1000A
1
10
1
2
3
5
10
20
50
0
5
10
15
20
25
30
800
900
700
1000
1100
I
2
t
2
s
3
)
ms
Cycles at 50Hz
Duration
P
I
2
t =
2
x t
2
1200
1300
I
2
t
0.1
0.01
0.001
T
t
–
c
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
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PDF描述 |
|---|---|
| DS1104SG30 | Rectifier Diode |
| DS1104SG | Rectifier Diode |
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| DS1107SG40 | Rectifier Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS1104SG30 | 制造商:Dynex Semiconductor 功能描述:STANDARD RECOVERY DIODE AND RECTIFIER 制造商:Dynex Semiconductor 功能描述:RECTIFIER MODULE - STANDARD RECOVERY |
| DS1107FP000 | 制造商:Thomas & Betts 功能描述:100A,CON,2P3W,MG,107,125V |
| DS1107FR00K | 制造商:Thomas & Betts 功能描述:100A,REC,2P3W,MG,107,00K,125V |
| DS1107FRAB0 | 制造商:Thomas & Betts 功能描述:100A,REC,2P3W,MG,107,AB0,125V |
| DS1107FRABK | 制造商:Thomas & Betts 功能描述:100A,REC,2P3W,MG,107,ABK,125V |
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