參數(shù)資料
型號(hào): DS1109SG46
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 參考電壓二極管
英文描述: Rectifier Diode
中文描述: 910 A, 4600 V, SILICON, RECTIFIER DIODE
封裝: G, 2 PIN
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 109K
代理商: DS1109SG46
5/7
www.dynexsemi.com
DS1109SG
Fig.4 Total stored charge
Fig.5 Maximum reverse recovery current
Fig.7 Maximum (limit) transient thermal impedance -
junction to case
Fig.6 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
150C)
0.1
0.01
0.001
T
t
c
C
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
d.c.
Halfwave
3 phase 120
6 phase 60
Effective thermal resistance
Junction to case
C/W
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
0.1
1.0
10
100
Rate of decay of on-state current, dI
F
/dt - (A/μs)
10000
1000
100
S
S
Conditions:
T
j
= 150
C
V
= 100V
I
F
= 1000A
I
RM
I
F
dI
F
/dt
Q
S
0.1
1.0
10
100
Rate of decay of forward current, dI
F
/dt - (A/μs)
1000
100
10
R
r
Conditions:
T
j
= 150
C
V
R
= 100V
I
F
= 1000A
1
10
1
2
3
5
10
20
50
0
5
10
15
20
25
30
325
350
300
375
400I
2
t
2
s
3
)
ms
Cycles at 50Hz
Duration
P
I
2
t =
2
x t
2
425
450
I
2
t
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