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參數(shù)資料
| 型號(hào)： | DS32kHz-N |
| 英文描述： | 32.768kHz Temperature-Compensated Crystal Oscillator |
| 中文描述： | 32.768kHz的溫度補(bǔ)償晶體振蕩器 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 443K |
| 代理商： | DS32KHZ-N |
DS32kHz
2 of 10
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground
Operating Temperature Range
Commercial
Industrial
Storage Temperature Range
Soldering Temperature (BGA)
Soldering Temperature, Leads (DIP)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device.
RECOMMENDED DC OPERATING CONDITIONS
(T
A
= -40°C to +85°C)
PARAMETER
SYMBOL
CONDITIONS
-3.0V to +7.0V
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
See IPC/JEDEC J-STD-020A (2x max) (Note 1)
260°C for 10 seconds (Notes 1, 2)
MIN
TYP
MAX
UNITS
Power-Supply Voltage
V
CC
4.5
5.0
5.5
V
Battery Voltage (Note 3)
V
BAT
2.7
3.0
3.3, 5.5
V
DC ELECTRICAL CHARACTERISTICS
(Over the operating range, unless otherwise specified.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Active Supply Current
I
CC
(Notes 4, 5)
V
CC
= 0V, V
BAT
= 3.3V
(Notes 4, 5, 6, 7)
I
OH
= -1.0mA
150
180
μA
Active Battery Current
I
BAT
1
4
μA
High Output Voltage (V
CC
)
V
OH
2.4
V
Low Output Voltage
V
OL
I
OL
= 2.1mA
0.4
V
Battery Switch Voltage
V
SW
V
BAT
V
High Output Voltage (V
BAT
)
V
OH
I
OH
= -0.1mA
2.4
V
Note 1:
Post-solder cleaning with water-washing techniques is acceptable, provided that ultrasonic vibration is not used. Such cleaning can
damage the crystal.
Note 2:
Encapsulated DIP modules can be successfully processed through conventional wave-soldering techniques, as long as the temperature
of the crystal contained inside does not exceed +150°C.
Note 3:
V
BAT
must be no greater than 3.3V when the device is used in the dual-supply operating modes.
Note 4:
Typical values are at +25°C and 5.0V V
, 3.0 V
, unless otherwise indicated.
Note 5:
These parameters are measured under no load conditions.
Note 6:
This current is the active mode current sourced from the backup supply/battery.
Note 7:
Battery current increases to 450μA (typ) for 122ms (typ) for every 64 seconds.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DS32KHZN/BGA | 功能描述:IC TCXO 32.768KHZ IND 36-BGA RoHS:否 類別:晶體和振蕩器 >> 振蕩器 系列:DS 標(biāo)準(zhǔn)包裝:1 系列:VG-4512CA 類型:VCXO 頻率:153.6MHz 功能:三態(tài)（輸出啟用） 輸出:LVPECL 電源電壓:3.3V 頻率穩(wěn)定性:- 工作溫度:-40°C ~ 85°C 電流 - 電源（最大）:60mA 額定值:- 安裝類型:表面貼裝 尺寸/尺寸:0.276" L x 0.197" W（7.00mm x 5.00mm） 高度:0.071"（1.80mm） 封裝/外殼:6-SMD，無(wú)引線（DFN，LCC） 包裝:Digi-Reel® 電流 - 電源（禁用）（最大）:- 其它名稱:SER3790DKR |
| DS32KHZN/BGA/T&R/ | 功能描述:TCXO振蕩器 RoHS:否 制造商:AVX 封裝 / 箱體: 頻率:32.768 kHz 頻率穩(wěn)定性: 負(fù)載電容:15 pF 端接類型:SMD/SMT 電源電壓:3 V 尺寸:2.5 mm W x 3.2 mm L x 1 mm H 輸出格式:CMOS 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 封裝:Reel |
| DS32KHZN/DIP | 功能描述:TCXO振蕩器 32.768Khz Temp Cntrld Crystal Osc RoHS:否 制造商:AVX 封裝 / 箱體: 頻率:32.768 kHz 頻率穩(wěn)定性: 負(fù)載電容:15 pF 端接類型:SMD/SMT 電源電壓:3 V 尺寸:2.5 mm W x 3.2 mm L x 1 mm H 輸出格式:CMOS 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 封裝:Reel |
| DS32KHZ-N/DIP | 制造商:DALLAS 制造商全稱:Dallas Semiconductor 功能描述:32.768kHz Temperature-Compensated Crystal Oscillator |
| DS32KHZN/WBGA | 功能描述:TCXO振蕩器 32.768Khz Temp Cntrld Crystal Osc RoHS:否 制造商:AVX 封裝 / 箱體: 頻率:32.768 kHz 頻率穩(wěn)定性: 負(fù)載電容:15 pF 端接類型:SMD/SMT 電源電壓:3 V 尺寸:2.5 mm W x 3.2 mm L x 1 mm H 輸出格式:CMOS 最小工作溫度:- 40 C 最大工作溫度:+ 85 C 封裝:Reel |
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