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參數(shù)資料
| 型號： | DSF11060SG60 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Fast Recovery Diode |
| 中文描述： | 400 A, 6000 V, SILICON, RECTIFIER DIODE |
| 封裝： | M779B, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | DSF11060SG60 |
DSF11060SG
2/6
SURGE RATINGS
Conditions
Max.
Units
4.2
kA
88 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM,
T
j
= 150
o
C
3.4
kA
57.8 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM,
T
j
= 150
o
C
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
o
C/W
-
0.064
Anode dc
Clamping force 12kN
with mounting compound
Thermal resistance - case to heatsink
R
th(c-h)
0.008
Double side
-
Single side
Thermal resistance - junction to case
R
th(j-c)
Single side cooled
Symbol
Parameter
-
0.016
o
C/W
o
C/W
Cathode dc
-
0.064
o
C/W
Double side cooled
-
0.032
o
C/W
T
stg
Storage temperature range
-55
125
o
C
kN
13.2
10.8
Clamping force
-
T
vj
Virtual junction temperature
Forward (conducting)
-
135
o
C
Min.
t
rr
70
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
μ
s, T
j
= 100
o
C
-
400
V
At T
vj
= 125
o
C
-
2.9
m
At T
vj
= 125
o
C
-
1.5
V
1.7
-
-
350
-
A
-
1000
μ
C
6.0
-
μ
s
At V
RRM
, T
case
= 125
o
C
-
mA
At 600A peak, T
case
= 25
o
C
-
3.8
V
Conditions
Max.
I
F
= 1000A, di
RR
/dt = 100A/
μ
s
T
case
= 125
o
C, V
R
= 100V
CHARACTERISTICS
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