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參數(shù)資料
| 型號： | FDG361N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CAP CER 68PF 1KVDC U2J 1206 |
| 中文描述： | 600 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, 6 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 80K |
| 代理商： | FDG361N |
FDG361N Rev C(W)
Typical Characteristics
0
2
4
6
8
10
0
1
2
3
4
Q
g
, GATE CHARGE (nC)
V
G
,
I
D
= 0.6A
V
DS
= 30V
70V
50V
0
50
100
150
200
0
10
20
30
40
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
C
ISS
C
RSS
C
OSS
f = 1MHz
V
GS
= 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
DC
1s
100m
100
μ
s
1ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 333
o
C/W
T
A
= 25
o
C
10ms
0
0.0000
1
2
4
6
8
10
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
P
SINGLE PULSE
R
θ
JA
= 333°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t
1
, TIME (sec)
r
T
R
θ
JA
(t) = r(t) + R
θ
JA
R
θ
JA
= 333°C/W
T
J
- T
A
= P * R
θ
JA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
)
t
1
t
2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
F
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