分離式半導(dǎo)體產(chǎn)品 FESB8DT-E3/45品牌、價格、PDF參數(shù)

FESB8DT-E3/45 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
FESB8DT-E3/45 Vishay General Semiconductor DIODE 8A 200V 35NS SGL TO263AB 0 1,000:$0.55830
FESB8BT-E3/45 Vishay General Semiconductor DIODE 8A 100V 35NS SGL TO263AB 0 1,000:$0.55830
MBR16H45-E3/45 Vishay General Semiconductor DIODE SCHOTT 10A 45V SGL TO220-2 0 1,000:$0.55665
MBRF1045HE3/45 Vishay General Semiconductor DIODE SCHOTT 10A 45V SGL TO220-2 0 1,000:$0.55485
MBRF1035HE3/45 Vishay General Semiconductor DIODE SCHOTT 10A 35V SGL TO220-2 0 1,000:$0.55485
MBRF1035-E3/45 Vishay General Semiconductor DIODE SCHOTT 10A 35V SGL TO220-2 0 1,000:$0.55485
MBRB7H60-E3/81 Vishay General Semiconductor DIODE SCHOTTKY 7.5A 60V TO263AB 0 800:$0.55328
MBRB7H50-E3/81 Vishay General Semiconductor DIODE SCHOTTKY 7.5A 50V TO263AB 0 800:$0.55328
MBRB7H45-E3/81 Vishay General Semiconductor DIODE SCHOTTKY 7.5A 45V TO263AB 0 800:$0.55328
FESB8DT-E3/45 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
二極管類型: 標準
電壓 - (Vr)(最大): 200V
電流 - 平均整流 (Io): 8A
電壓 - 在 If 時為正向 (Vf)(最大): 950mV @ 8A
速度: 快速恢復(fù) = 200mA(Io)
反向恢復(fù)時間(trr): 35ns
電流 - 在 Vr 時反向漏電: 10µA @ 200V
電容@ Vr, F: -
安裝類型: 表面貼裝
封裝/外殼: TO-263-3,D²Pak(2 引線+接片),TO-263AB
供應(yīng)商設(shè)備封裝: TO-263AB
包裝: 管件