元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
BTS121A E3045A | Infineon Technologies | MOSFET N CH 100V 22A TO-220AB | 0 | 1,000:$5.17037 2,000:$4.97887 5,000:$4.78738 10,000:$4.69163 25,000:$4.59588 |
BUZ31 H | Infineon Technologies | MOSFET N-CH 200V 14.5A TO220-3 | 0 | 500:$1.07012 |
BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 1:$2.27000 10:$1.94200 25:$1.74760 100:$1.58590 250:$1.42408 500:$1.22988 1,000:$1.03568 2,500:$0.93858 |
BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 1:$2.27000 10:$1.94200 25:$1.74760 100:$1.58590 250:$1.42408 500:$1.22988 1,000:$1.03568 2,500:$0.93858 |
BSC018NE2LSI | Infineon Technologies | MOSFET N-CH 25V 29A TDSON-8 | 5,000 | 5,000:$0.84149 10,000:$0.80913 25,000:$0.79294 50,000:$0.77676 |
IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1:$1.99000 10:$1.70900 25:$1.53840 100:$1.39600 250:$1.25356 500:$1.08262 |
IPB054N06N3 G | Infineon Technologies | MOSFET N-CH 60V 80A TO263-3 | 2,000 | 1,000:$0.82621 2,000:$0.76923 5,000:$0.74074 10,000:$0.71225 25,000:$0.69801 50,000:$0.68376 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 100V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 22A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 100 毫歐 @ 9.5A,4.5V |
Id 時的 Vgs(th)(最大): | 2.5V @ 1mA |
閘電荷(Qg) @ Vgs: | - |
輸入電容 (Ciss) @ Vds: | 1500pF @ 25V |
功率 - 最大: | 95W |
安裝類型: | * |
封裝/外殼: | * |
供應(yīng)商設(shè)備封裝: | * |
包裝: | * |