分離式半導(dǎo)體產(chǎn)品 IPB06N03LAT品牌、價(jià)格、PDF參數(shù)

IPB06N03LAT • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
IPB06N03LAT Infineon Technologies MOSFET N-CH 25V 50A D2PAK 0
IPB06N03LAT Infineon Technologies MOSFET N-CH 25V 50A D2PAK 0
BSS192PE6327T Infineon Technologies MOSFET P-CH 250V 190MA SOT-89 0
BSS192PE6327T Infineon Technologies MOSFET P-CH 250V 190MA SOT-89 0
BSP317PE6327T Infineon Technologies MOSFET P-CH 250V 430MA SOT223 0
BSP317PE6327T Infineon Technologies MOSFET P-CH 250V 430MA SOT223 0
BSP316PE6327T Infineon Technologies MOSFET P-CH 100V 680MA SOT223 0
BSP316PE6327T Infineon Technologies MOSFET P-CH 100V 680MA SOT223 0
BSP295E6327T Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 0 1:$0.94000
10:$0.75500
100:$0.56620
1,000:$0.32504
BSP295E6327T Infineon Technologies MOSFET N-CH 60V 1.8A SOT223 0 1,000:$0.32504
5,000:$0.29358
10,000:$0.28834
BSP171PE6327T Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 0
BSP171PE6327T Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 0
BSP170PE6327T Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 0
BSP170PE6327T Infineon Technologies MOSFET P-CH 60V 1.9A SOT223 0
BSP129E6327T Infineon Technologies MOSFET N-CH 240V 350MA SOT223 0
BSP129E6327T Infineon Technologies MOSFET N-CH 240V 350MA SOT223 0
IPB06N03LAT • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點(diǎn): 邏輯電平門(mén)
漏極至源極電壓(Vdss): 25V
電流 - 連續(xù)漏極(Id) @ 25° C: 50A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: 5.9 毫歐 @ 30A，10V
Id 時(shí)的 Vgs(th)（最大）: 2V @ 40µA
閘電荷(Qg) @ Vgs: 22nC @ 5V
輸入電容 (Ciss) @ Vds: 2653pF @ 15V
功率 - 最大: 83W
安裝類型: 表面貼裝
封裝/外殼: TO-263-3，D²Pak（2 引線+接片），TO-263AB
供應(yīng)商設(shè)備封裝: PG-TO263-3
包裝: 剪切帶 (CT)