| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI3433BDV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 4.3A 6-TSOP | 0 | 3,000:$0.22475 |
| SI7888DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V PPAK 8SOIC | 0 | 3,000:$0.89100 |
| TN2404K-T1-GE3 | Vishay Siliconix | MOSFET N-CH 240V 200MA TO236 | 0 | 3,000:$0.33350 |
| SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 0 | 3,000:$0.22320 6,000:$0.20880 15,000:$0.19440 30,000:$0.18360 75,000:$0.18000 150,000:$0.17280 |
| SIE848DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 3,000:$1.14750 6,000:$1.10500 15,000:$1.06250 30,000:$1.04125 75,000:$1.02000 |
| SI3853DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 1.6A 6-TSOP | 0 | 3,000:$0.33350 |
| SI3812DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 2A 6-TSOP | 0 | 3,000:$0.33350 |
| SQ4840EY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 40V 8SOIC | 0 | 2,500:$1.12455 |
| SI1300BDL-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V SC-70-3 | 0 | 1:$0.58000 25:$0.38000 100:$0.31200 250:$0.26000 500:$0.21600 1,000:$0.16000 |
| IRLR024TRLPBF | Vishay Siliconix | MOSFET N-CH 60V 14A DPAK | 0 | 3,000:$0.73170 |
| SIE878DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH 25V POLARPAK | 0 | 1:$1.80000 25:$1.39040 100:$1.26180 250:$1.13300 500:$0.97850 1,000:$0.82400 |
| SQD50P06-15L-GE3 | Vishay Siliconix | MOSFET P-CH 60V 50A TO252 | 0 | 2,000:$1.28250 |
| SQD50P04-09L-GE3 | Vishay Siliconix | MOSFET P-CH D-S 40V TO252 | 0 | 2,000:$1.28250 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 4.3A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 42 毫歐 @ 5.6A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 850mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 18nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 1.1W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSOP（0.065"，1.65mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 6-TSOP |
| 包裝: | 帶卷 (TR) |