分離式半導(dǎo)體產(chǎn)品 BUK6E2R3-40C,127品牌、價(jià)格、PDF參數(shù)

BUK6E2R3-40C,127 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
BUK6E2R3-40C,127 NXP Semiconductors MOSFET N-CH TRENCH I2PACK 4,994 1:$3.68000
10:$3.28500
25:$2.95600
100:$2.69330
250:$2.43052
500:$2.18090
1,000:$1.83932
2,500:$1.74736
5,000:$1.68166
BUK7606-75B,118 NXP Semiconductors MOSFET N-CH 75V 75A D2PAK 0 800:$1.50135
1,600:$1.40126
2,400:$1.33120
5,600:$1.28115
20,000:$1.24112
40,000:$1.20108
PSMN015-100P,127 NXP Semiconductors MOSFET N-CH 100V 75A TO220AB 1,556 1:$2.86000
10:$2.58700
25:$2.31000
100:$2.07900
250:$1.84800
500:$1.61700
1,000:$1.33980
2,500:$1.24740
5,000:$1.20120
BUK6E2R3-40C,127 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點(diǎn): 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 40V
電流 - 連續(xù)漏極(Id) @ 25° C: 120A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 2.3 毫歐 @ 25A,10V
Id 時(shí)的 Vgs(th)(最大): 2.8V @ 1mA
閘電荷(Qg) @ Vgs: 260nC @ 10V
輸入電容 (Ciss) @ Vds: 15100pF @ 25V
功率 - 最大: 306W
安裝類型: 通孔
封裝/外殼: TO-262-3,長(zhǎng)引線,I²Pak,TO-262AA
供應(yīng)商設(shè)備封裝: I2PAK
包裝: 管件