| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| BUK653R5-55C,127 | NXP Semiconductors | MOSFET N-CH TRENCH SOT78A | 4,932 | 1:$2.61000 10:$2.36200 25:$2.10840 100:$1.89770 250:$1.68680 500:$1.47596 1,000:$1.22293 2,500:$1.13859 5,000:$1.09642 |
| PSMN2R0-60PS,127 | NXP Semiconductors | MOSFET N-CH 60V 120A TO220 | 2,858 | 1:$3.36000 10:$3.00000 25:$2.70000 100:$2.46000 250:$2.22000 500:$1.99200 1,000:$1.68000 2,500:$1.59600 5,000:$1.53600 |
| BUK652R1-30C,127 | NXP Semiconductors | MOSFET N-CH TRENCH SOT78A | 4,998 | 1:$2.61000 10:$2.36200 25:$2.10840 100:$1.89770 250:$1.68680 500:$1.47596 1,000:$1.22293 2,500:$1.13859 5,000:$1.09642 |
| BUK652R6-40C,127 | NXP Semiconductors | MOSFET N-CH TRENCH SOT78A | 5,000 | 1:$2.61000 10:$2.36200 25:$2.10840 100:$1.89770 250:$1.68680 500:$1.47596 1,000:$1.22293 2,500:$1.13859 5,000:$1.09642 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 55V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 120A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 3.9 毫歐 @ 25A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.8V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 191nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 11516pF @ 25V |
| 功率 - 最大: | 263W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-220-3 |
| 供應(yīng)商設(shè)備封裝: | TO-220AB |
| 包裝: | 管件 |