| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PSMN102-200Y,115 | NXP Semiconductors | MOSFET N-CH 200V 21.5A LFPAK | 1,366 | 1:$2.39000 10:$2.16000 25:$1.93520 100:$1.74000 250:$1.54500 500:$1.35000 |
| PSMN102-200Y,115 | NXP Semiconductors | MOSFET N-CH 200V 21.5A LFPAK | 0 | 1,500:$1.08800 3,000:$1.01300 7,500:$0.97500 10,500:$0.93800 37,500:$0.92300 75,000:$0.90000 |
| BUK761R8-30C,118 | NXP Semiconductors | MOSFET N-CH TRENCH 30V D2PAK | 788 | 1:$3.22000 10:$2.88700 25:$2.59640 100:$2.36130 250:$2.13748 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 200V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 21.5A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 102 毫歐 @ 12A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 30.7nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1568pF @ 30V |
| 功率 - 最大: | 113W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-100，SOT-669，4-LFPAK |
| 供應(yīng)商設(shè)備封裝: | LFPAK，Power-SO8 |
| 包裝: | 剪切帶 (CT) |