分離式半導(dǎo)體產(chǎn)品 PH3230S,115品牌、價(jià)格、PDF參數(shù)

PH3230S,115 • 品牌、價(jià)格
元器件型號 廠商 描述 數(shù)量 價(jià)格
PH3230S,115 NXP Semiconductors MOSFET N-CH 30V 100A LFPAK 25,500 1,500:$1.10900
3,000:$1.03300
7,500:$0.99500
10,500:$0.95600
37,500:$0.94100
75,000:$0.91800
PHB45NQ15T,118 NXP Semiconductors MOSFET N-CH 150V 45.1A D2PAK 3,686 1:$2.23000
10:$2.01600
25:$1.80600
100:$1.62400
250:$1.44200
PHB45NQ15T,118 NXP Semiconductors MOSFET N-CH 150V 45.1A D2PAK 3,686 1:$2.23000
10:$2.01600
25:$1.80600
100:$1.62400
250:$1.44200
PHB45NQ15T,118 NXP Semiconductors MOSFET N-CH 150V 45.1A D2PAK 3,200 800:$1.10600
1,600:$1.01500
2,400:$0.94500
5,600:$0.91000
20,000:$0.87500
40,000:$0.86100
80,000:$0.84000
PH3230S,115 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點(diǎn): 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 100A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 3.2 毫歐 @ 25A，10V
Id 時(shí)的 Vgs(th)（最大）: 3V @ 1mA
閘電荷(Qg) @ Vgs: 42nC @ 5V
輸入電容 (Ciss) @ Vds: 4100pF @ 10V
功率 - 最大: 62.5W
安裝類型: 表面貼裝
封裝/外殼: SC-100，SOT-669，4-LFPAK
供應(yīng)商設(shè)備封裝: LFPAK，Power-SO8
包裝: 帶卷 (TR)