元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
PSMN013-100BS,118 | NXP Semiconductors | MOSFET N CH 100V 68A D2PAK | 0 | 800:$0.76410 1,600:$0.69045 2,400:$0.64442 5,600:$0.61220 20,000:$0.58918 40,000:$0.57077 80,000:$0.55236 |
PSMN1R8-30BL,118 | NXP Semiconductors | MOSFET N CH 30V 100A D2PAK | 0 | 800:$1.15183 1,600:$1.05705 2,400:$0.98415 5,600:$0.94770 20,000:$0.91125 40,000:$0.89667 80,000:$0.87480 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | MOSFET N 通道,金屬氧化物 |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 100V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 68A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 13.9 毫歐 @ 15A,10V |
Id 時的 Vgs(th)(最大): | 4V @ 1mA |
閘電荷(Qg) @ Vgs: | 59nC @ 10V |
輸入電容 (Ciss) @ Vds: | 3195pF @ 50V |
功率 - 最大: | 170W |
安裝類型: | 表面貼裝 |
封裝/外殼: | TO-263-3,D²Pak(2 引線+接片),TO-263AB |
供應(yīng)商設(shè)備封裝: | D2PAK |
包裝: | 帶卷 (TR) |