分離式半導(dǎo)體產(chǎn)品 SI4620DY-T1-GE3品牌、價(jià)格、PDF參數(shù)

SI4620DY-T1-GE3 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
SI4620DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.24360
5,000:$0.22680
12,500:$0.21840
25,000:$0.21000
62,500:$0.20664
125,000:$0.20160
SUD35N10-26P-GE3 Vishay Siliconix MOSFET N-CH D-S 100V DPAK 6,000 2,000:$0.94500
6,000:$0.91000
10,000:$0.87500
50,000:$0.84000
SI4004DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 374 1:$0.99000
25:$0.78000
100:$0.70200
250:$0.61100
500:$0.54600
1,000:$0.42900
SI4004DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 374 1:$0.99000
25:$0.78000
100:$0.70200
250:$0.61100
500:$0.54600
1,000:$0.42900
SI1400DL-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V SC-70-6 495 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SI4004DY-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 8-SOIC 0 2,500:$0.36400
5,000:$0.34580
12,500:$0.33150
25,000:$0.32240
62,500:$0.31200
SI1400DL-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V SC-70-6 495 1:$0.74000
25:$0.51960
100:$0.44550
250:$0.38476
500:$0.33076
1,000:$0.25650
SIR882DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 2,836 1:$2.84000
25:$2.18720
100:$1.98450
250:$1.78200
500:$1.53900
1,000:$1.29600
SIR882DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 2,836 1:$2.84000
25:$2.18720
100:$1.98450
250:$1.78200
500:$1.53900
1,000:$1.29600
SIR882DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 0 3,000:$1.09350
6,000:$1.05300
15,000:$1.01250
30,000:$0.99225
75,000:$0.97200
SI1400DL-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V SC-70-6 0 3,000:$0.20925
6,000:$0.19575
15,000:$0.18225
30,000:$0.17213
75,000:$0.16875
150,000:$0.16200
SIE868DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V POLARPAK 5,945 1:$2.84000
25:$2.18720
100:$1.98450
250:$1.78200
500:$1.53900
1,000:$1.29600
SIE868DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V POLARPAK 5,945 1:$2.84000
25:$2.18720
100:$1.98450
250:$1.78200
500:$1.53900
1,000:$1.29600
SIE868DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 40V POLARPAK 3,000 3,000:$1.09350
6,000:$1.05300
15,000:$1.01250
30,000:$0.99225
75,000:$0.97200
SI4620DY-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點(diǎn): 二極管(隔離式)
漏極至源極電壓(Vdss): 30V
電流 - 連續(xù)漏極(Id) @ 25° C: 6A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 35 毫歐 @ 6A,10V
Id 時(shí)的 Vgs(th)(最大): 2.5V @ 250µA
閘電荷(Qg) @ Vgs: 13nC @ 10V
輸入電容 (Ciss) @ Vds: 1040pF @ 15V
功率 - 最大: 3.1W
安裝類型: 表面貼裝
封裝/外殼: 8-SOIC(0.154",3.90mm 寬)
供應(yīng)商設(shè)備封裝: 8-SOICN
包裝: 帶卷 (TR)
電子產(chǎn)品資料
相關(guān)代理商
最新IC采購(gòu)型號(hào)