分離式半導(dǎo)體產(chǎn)品 SIR878DP-T1-GE3品牌、價格、PDF參數(shù)

SIR878DP-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
SIR878DP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 8-SOIC 3,000 3,000:$0.91125
6,000:$0.87750
15,000:$0.84375
30,000:$0.82688
75,000:$0.81000
SI4434DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 250V 8-SOIC 7,150 1:$2.51000
25:$1.93880
100:$1.75910
250:$1.57960
500:$1.36420
1,000:$1.14880
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
SI5476DU-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 60V PPAK CHIPFET 13,451 1:$1.44000
25:$1.14000
100:$1.02600
250:$0.89300
500:$0.79800
1,000:$0.62700
SIR878DP-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道,金屬氧化物
FET 特點: 標準
漏極至源極電壓(Vdss): 100V
電流 - 連續(xù)漏極(Id) @ 25° C: 40A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 14 毫歐 @ 15A,10V
Id 時的 Vgs(th)(最大): 2.8V @ 250µA
閘電荷(Qg) @ Vgs: 43nC @ 10V
輸入電容 (Ciss) @ Vds: 1250pF @ 50V
功率 - 最大: 44.5W
安裝類型: 表面貼裝
封裝/外殼: PowerPAK? SO-8
供應(yīng)商設(shè)備封裝: PowerPAK? SO-8
包裝: 帶卷 (TR)