| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI7619DN-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1212-8 PPAK | 3,000 | 3,000:$0.30450 6,000:$0.28350 15,000:$0.27300 30,000:$0.26250 75,000:$0.25830 150,000:$0.25200 |
| SI3477DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V 6-TSOP | 3,837 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
| SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 5,927 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 6,000 | 3,000:$0.24650 6,000:$0.22950 15,000:$0.22100 30,000:$0.21250 75,000:$0.20910 150,000:$0.20400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 24A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 21 毫歐 @ 10.5A，10V |
| Id 時的 Vgs(th)（最大）: | 3V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 50nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1350pF @ 15V |
| 功率 - 最大: | 27.8W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應(yīng)商設(shè)備封裝: | PowerPAK? 1212-8 |
| 包裝: | 帶卷 (TR) |