分離式半導體產(chǎn)品 SIS454DN-T1-GE3品牌、價格、PDF參數(shù)

SIS454DN-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
SIS454DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1212-8 PPAK 8,180 1:$1.10000
25:$0.87000
100:$0.78300
250:$0.68152
500:$0.60900
1,000:$0.47850
SIS454DN-T1-GE3 Vishay Siliconix MOSFET N-CH 20V 1212-8 PPAK 6,000 3,000:$0.40600
6,000:$0.38570
15,000:$0.36975
30,000:$0.35960
75,000:$0.34800
SI7621DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 3,000 1:$0.73000
25:$0.56120
100:$0.49500
250:$0.42900
500:$0.36300
1,000:$0.28875
SI7621DN-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 1212-8 PPAK 0 3,000:$0.23925
6,000:$0.22275
15,000:$0.21450
30,000:$0.20625
75,000:$0.20295
150,000:$0.19800
SI4156DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 5,184 1:$1.03000
25:$0.81000
100:$0.72900
250:$0.63452
500:$0.56700
1,000:$0.44550
SI3475DV-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 200V 6-TSOP 3,000 3,000:$0.37800
6,000:$0.35910
15,000:$0.34425
30,000:$0.33480
75,000:$0.32400
SIS454DN-T1-GE3 • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 標準
漏極至源極電壓(Vdss): 20V
電流 - 連續(xù)漏極(Id) @ 25° C: 35A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 3.7 毫歐 @ 20A，10V
Id 時的 Vgs(th)（最大）: 2.2V @ 250µA
閘電荷(Qg) @ Vgs: 53nC @ 10V
輸入電容 (Ciss) @ Vds: 1900pF @ 10V
功率 - 最大: 52W
安裝類型: 表面貼裝
封裝/外殼: PowerPAK? 1212-8
供應(yīng)商設(shè)備封裝: PowerPAK? 1212-8
包裝: 剪切帶 (CT)