分離式半導體產(chǎn)品 BSS139 H6327品牌、價格、PDF參數(shù)

BSS139 H6327 • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
BSS139 H6327 Infineon Technologies MOSFET N-CH 250V 100MA SOT23 2,728 1:$0.60000
10:$0.48400
25:$0.42320
100:$0.36270
250:$0.31320
500:$0.26926
1,000:$0.20881
BSS139 H6327 Infineon Technologies MOSFET N-CH 250V 100MA SOT23 2,728 1:$0.60000
10:$0.48400
25:$0.42320
100:$0.36270
250:$0.31320
500:$0.26926
1,000:$0.20881
BSS139 H6327 Infineon Technologies MOSFET N-CH 250V 100MA SOT23 0 3,000:$0.17035
6,000:$0.15936
15,000:$0.14837
30,000:$0.14012
75,000:$0.13738
150,000:$0.13188
BSV236SP H6327 Infineon Technologies MOSFET P-CH 20V 1.5A SOT363 5,500 1:$0.56000
10:$0.44200
25:$0.36800
100:$0.30230
250:$0.25188
500:$0.20926
1,000:$0.15500
BSV236SP H6327 Infineon Technologies MOSFET P-CH 20V 1.5A SOT363 5,500 1:$0.56000
10:$0.44200
25:$0.36800
100:$0.30230
250:$0.25188
500:$0.20926
1,000:$0.15500
BSS139 H6327 • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 耗盡模式
漏極至源極電壓(Vdss): 250V
電流 - 連續(xù)漏極(Id) @ 25° C: 100mA
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 14 歐姆 @ 100µA，10V
Id 時的 Vgs(th)（最大）: 1V @ 56µA
閘電荷(Qg) @ Vgs: 3.5nC @ 5V
輸入電容 (Ciss) @ Vds: 76pF @ 25V
功率 - 最大: 360mW
安裝類型: 表面貼裝
封裝/外殼: TO-236-3，SC-59，SOT-23-3
供應商設備封裝: PG-SOT23-3
包裝: Digi-Reel®