| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| STB34N65M5 | STMicroelectronics | MOSFET N-CH 650V 29A D2PAK | 1,000 | 1:$9.80000 10:$8.81600 25:$8.01800 100:$7.25800 250:$6.65000 500:$6.08000 |
| STB34N65M5 | STMicroelectronics | MOSFET N-CH 650V 29A D2PAK | 0 | 1,000:$5.13000 2,000:$4.94000 5,000:$4.75000 10,000:$4.67400 25,000:$4.56000 |
| STB21N90K5 | STMicroelectronics | MOSFET N-CH 900V 18.5A D2PAK | 0 | 1,000:$3.48600 2,000:$3.31170 5,000:$3.18720 10,000:$3.08760 25,000:$2.98800 |
| STFW60N65M5 | STMicroelectronics | MOSFET N-CH TO-3PF/ISOWATT 218 | 294 | 1:$13.86000 10:$12.60000 100:$10.71000 250:$9.76500 500:$9.13500 1,000:$8.37900 2,500:$8.06400 5,000:$7.81200 10,000:$7.56000 |
| STF34N65M5 | STMicroelectronics | MOSFET N-CH 650V 29A TO-220FP | 440 | 1:$9.78000 10:$8.79800 25:$8.01560 100:$7.23350 250:$6.64700 500:$6.06050 1,000:$5.27850 2,500:$5.08300 5,000:$4.88750 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 650V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 29A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 110 毫歐 @ 14.5A，10V |
| Id 時的 Vgs(th)（最大）: | 5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 70nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2590pF @ 100V |
| 功率 - 最大: | 190W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D²PAK |
| 包裝: | 剪切帶 (CT) |