| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| STB34NM60ND | STMicroelectronics | MOSFET N-CH 600V 29A D2PAK | 624 | 1:$9.16000 10:$8.23600 25:$7.49040 100:$6.78050 250:$6.21252 500:$5.68000 |
| STFI13NM60N | STMicroelectronics | MOSFET N-CH 650V 11A I2PAK FP | 1,500 | 1:$3.01000 10:$2.71600 25:$2.42520 100:$2.18250 250:$1.94000 500:$1.69750 1,000:$1.40650 2,500:$1.30950 5,000:$1.26100 |
| STU12N65M5 | STMicroelectronics | MOSFET N-CH 650V 8.5A IPAK | 2,776 | 1:$2.99000 25:$2.41520 100:$2.17350 250:$1.93200 500:$1.69050 1,000:$1.40070 2,500:$1.30410 5,000:$1.25580 10,000:$1.20750 |
| STP210N75F6 | STMicroelectronics | MOSFET N-CH 75V 120A TO-220AB | 927 | 1:$5.99000 10:$5.35000 25:$4.81520 100:$4.38700 250:$3.95900 500:$3.55240 1,000:$2.99600 2,500:$2.84620 5,000:$2.73920 |
| STH250N55F3-6 | STMicroelectronics | MOSFET N-CH 55V 180A H2PAK-6 | 1,000 | 1:$5.99000 10:$5.36600 25:$4.82560 100:$4.38880 250:$3.97280 500:$3.55680 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 29A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 110 毫歐 @ 14.5A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 80.4nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2785pF @ 50V |
| 功率 - 最大: | 190W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D²PAK |
| 包裝: | Digi-Reel® |