| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| DMN3135LVT-7 | Diodes Inc | MOSFET N CH 30V 4.1A TSOT26 | 6,000 | 1:$0.48000 10:$0.40200 25:$0.35200 100:$0.30130 250:$0.26132 500:$0.22132 1,000:$0.17063 |
| DMS3015SSS-13 | Diodes Inc | MOSFET N-CH 30V 11A SO8 | 2,788 | 1:$0.46000 10:$0.39100 25:$0.34280 100:$0.29360 250:$0.25460 500:$0.21566 1,000:$0.16625 |
| DMS3015SSS-13 | Diodes Inc | MOSFET N-CH 30V 11A SO8 | 2,500 | 2,500:$0.14725 5,000:$0.13775 12,500:$0.12825 25,000:$0.12160 62,500:$0.11875 125,000:$0.11400 |
| DMP2039UFDE-7 | Diodes Inc | MOSF P CH 25V 6.7A U-DFN2020-6E | 6,000 | 1:$0.46000 10:$0.39100 25:$0.34280 100:$0.29360 250:$0.25460 500:$0.21566 1,000:$0.16625 |
| DMP2039UFDE-7 | Diodes Inc | MOSF P CH 25V 6.7A U-DFN2020-6E | 6,000 | 1:$0.46000 10:$0.39100 25:$0.34280 100:$0.29360 250:$0.25460 500:$0.21566 1,000:$0.16625 |
| DMP2039UFDE-7 | Diodes Inc | MOSF P CH 25V 6.7A U-DFN2020-6E | 6,000 | 3,000:$0.14725 6,000:$0.13775 15,000:$0.12825 30,000:$0.12160 75,000:$0.11875 150,000:$0.11400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 4.1A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 6 歐姆 @ 115mA，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2.2V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 4.1nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 305pF @ 15V |
| 功率 - 最大: | 840mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SOT-23-6 |
| 供應(yīng)商設(shè)備封裝: | TSOT26 |
| 包裝: | 剪切帶 (CT) |