分離式半導(dǎo)體產(chǎn)品 2SK3666-2-TB-E品牌、價(jià)格、PDF參數(shù)
2SK3666-2-TB-E • 品牌、價(jià)格
| 元器件型號(hào) |
廠商 |
描述 |
數(shù)量 |
價(jià)格 |
| 2SK3666-2-TB-E |
ON Semiconductor |
IC JFET N-CH 30V 10MA CP |
0 |
6,000:$0.08653
|
| TF256-3-TL-H |
ON Semiconductor |
IC JFET N-CH 20V 1MA USFP |
0 |
10,000:$0.08122
|
| TF256-5-TL-H |
ON Semiconductor |
IC JFET N-CH 10MA 1MA USFP |
0 |
10,000:$0.08122
|
| TF256-4-TL-H |
ON Semiconductor |
IC JFET N-CH 10MA 1MA USFP |
0 |
10,000:$0.08122
|
| TF252-5-TL-H |
ON Semiconductor |
IC JFET N-CH 20V 1MA USFP |
0 |
10,000:$0.07673
|
| TF252-4-TL-H |
ON Semiconductor |
IC JFET N-CH 20V 1MA USFP |
0 |
10,000:$0.07673
|
| TF256TH-5-TL-H |
ON Semiconductor |
IC JFET N-CH 10MA 1MA VTFP |
0 |
8,000:$0.07596
|
| TF256TH-4-TL-H |
ON Semiconductor |
IC JFET N-CH 10MA 1MA VTFP |
0 |
8,000:$0.07596
|
2SK3666-2-TB-E • PDF參數(shù)
| 類別: |
分離式半導(dǎo)體產(chǎn)品
|
| 漏極至源極電壓(Vdss): |
30V
|
| 漏極電流 (Id) - 最大: |
10mA
|
| FET 型: |
N 溝道
|
| 電壓 - 擊穿 (V(BR)GSS): |
-
|
| 電壓 - 切斷 (VGS 關(guān)）@ Id: |
180mV @ 1µA
|
| 輸入電容 (Ciss) @ Vds: |
4pF @ 10V
|
| 電阻 - RDS（開）: |
200 歐姆
|
| 安裝類型: |
表面貼裝
|
| 包裝: |
帶卷 (TR)
|
| 封裝/外殼: |
TO-236-3，SC-59，SOT-23-3
|
| 供應(yīng)商設(shè)備封裝: |
3-CP
|
| 功率 - 最大: |
200mW
|