元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
---|---|---|---|---|
DMN6040SSD-13 | Diodes Inc | MOSFET N CH 60V 5A SO-8 | 2,500 | 2,500:$0.17438 5,000:$0.16313 12,500:$0.15188 25,000:$0.14400 62,500:$0.14062 125,000:$0.13500 |
DMN2019UTS-13 | Diodes Inc | MOSFET 2N-CH 20V 5.4A TSSOP-8 | 0 | 1:$0.57000 10:$0.44600 25:$0.37640 100:$0.30690 250:$0.25416 500:$0.20996 1,000:$0.15725 |
DMN2019UTS-13 | Diodes Inc | MOSFET 2N-CH 20V 5.4A TSSOP-8 | 0 | 1:$0.57000 10:$0.44600 25:$0.37640 100:$0.30690 250:$0.25416 500:$0.20996 1,000:$0.15725 |
DMN2019UTS-13 | Diodes Inc | MOSFET 2N-CH 20V 5.4A TSSOP-8 | 0 | 2,500:$0.14025 5,000:$0.13175 12,500:$0.12325 25,000:$0.11305 62,500:$0.10880 125,000:$0.10455 |
類別: | 分離式半導體產(chǎn)品 |
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FET 型: | 2 個 N 溝道(雙) |
FET 特點: | 邏輯電平門 |
漏極至源極電壓(Vdss): | 60V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 5A |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 40 毫歐 @ 4.5A,10V |
Id 時的 Vgs(th)(最大): | 3V @ 250µA |
閘電荷(Qg) @ Vgs: | 22.4nC @ 10V |
輸入電容 (Ciss) @ Vds: | 1287pF @ 25V |
功率 - 最大: | 1.3W |
安裝類型: | 表面貼裝 |
封裝/外殼: | 8-SOIC(0.154",3.90mm 寬) |
供應商設備封裝: | 8-SO |
包裝: | 帶卷 (TR) |