元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
---|---|---|---|---|
SSM6N15AFU,LF | Toshiba | MOSFET N CH 30V 100MA 2-2J1C | 6,000 | 1:$0.44000 10:$0.34200 25:$0.28520 100:$0.23400 250:$0.19500 500:$0.16200 1,000:$0.12000 |
SSM6N15AFU,LF | Toshiba | MOSFET N CH 30V 100MA 2-2J1C | 6,000 | 1:$0.44000 10:$0.34200 25:$0.28520 100:$0.23400 250:$0.19500 500:$0.16200 1,000:$0.12000 |
SSM6N37FE,LM | Toshiba | MOSFET N CH 20V 250MA 2-2N1D | 0 | 4,000:$0.09900 8,000:$0.09350 12,000:$0.08525 28,000:$0.07975 100,000:$0.07013 200,000:$0.06875 |
SSM6N37FE,LM | Toshiba | MOSFET N CH 20V 250MA 2-2N1D | 0 | 1:$0.58000 10:$0.41300 25:$0.34120 100:$0.27500 250:$0.19800 500:$0.15950 1,000:$0.12375 |
SSM6N37FE,LM | Toshiba | MOSFET N CH 20V 250MA 2-2N1D | 0 | 1:$0.58000 10:$0.41300 25:$0.34120 100:$0.27500 250:$0.19800 500:$0.15950 1,000:$0.12375 |
類別: | 分離式半導(dǎo)體產(chǎn)品 |
---|---|
FET 型: | 2 個(gè) N 溝道(雙) |
FET 特點(diǎn): | 邏輯電平門 |
漏極至源極電壓(Vdss): | 30V |
電流 - 連續(xù)漏極(Id) @ 25° C: | 100mA |
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 3.6 歐姆 @ 10mA,4V |
Id 時(shí)的 Vgs(th)(最大): | 1.5V @ 100µA |
閘電荷(Qg) @ Vgs: | - |
輸入電容 (Ciss) @ Vds: | 13.5pF @ 3V |
功率 - 最大: | 300mW |
安裝類型: | 表面貼裝 |
封裝/外殼: | 6-TSSOP,SC-88,SOT-363 |
供應(yīng)商設(shè)備封裝: | US6 |
包裝: | 剪切帶 (CT) |